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Dear Colleagues!
We would like to inform you that our company elaborated and enriched the semiconductor module line with the base-plate width 70 mm, housing style – M.E.
We made the dimensions and circuit schematics of this type module to European standards that simplify the substitution of analogues on our devices.
The modernization of semiconductor pellets for this type module was made. It reduced static losses of the devices and improved thermal characteristics.
The design of the module M.E in new version compares favorably with the current version because of following advantages:
- New semiconductor elements of 60 mm in diameter were developed (56 mm in the current version). Nitride aluminum ceramic insulator is applied larger in diameter, that lead to the reduction of thermal resistance.
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Module design
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Module type
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Rthjc
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VIsol
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DC
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Sine wave, 50 Hz; RMS
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1 min
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1 s
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oC/W
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kV
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М.E
(new design)
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MT1-560-36
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0.042
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3.00
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3.60
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MT1-635-28
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0.042
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3.00
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3.60
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MT1-765-22
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0.042
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3.00
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3.60
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MT1-830-18
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0.042
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3.00
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3.60
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MD1-950-44
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0.042
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3.00
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3.60
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MD1-1125-28
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0.042
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3.00
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3.60
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M.E
(current design)
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MT1-500-36
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0.045
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3.00
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3.60
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MT1-630-28
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0.045
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3.00
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3.60
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MT1-740-22
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0.045
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3.00
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3.60
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MT1-800-18
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0.045
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3.00
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3.60
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MD1-800-44
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0.045
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3.00
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3.60
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MD1-1000-28
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0.045
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3.00
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3.60
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Typical multitude of thermal resistance of new design module is less on about 0.0030 oC /W at then typical thermal resistance of current design module.
- To stabilize quiescent dissipation in time, to increase the reliability and life time of new design module, the layers with rhodium coating are applied.
- Currently, new design modules are undergoing certification on conformance to standard UL-1557.
- Our company has semi-automatic technological assembly line of new design modules.
On the basis of abovementioned facts, our company plans to realize gradual substitution of current design modules on new design modules. It should be managed during the first part of the 2010.
The basic parameters of thyristor modules.
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Type
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ITAV
А
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TC
oC
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ITSM
kА
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VDRM.VRRM
V
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Tj max
oC
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VTM (ITM)
V(А)
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VT(TO)
V
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rT
MΩ
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VISOL
кV
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Rthjc
К/W
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Tjmax
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25 oC
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Sinus .
50 hz; RMS; t=1 s
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At the position АС
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MT1-560-36
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560
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85
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21.0
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3000-3600
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125
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1.85(1570)
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1.05
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0.470
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3.6
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0.0420
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MT1-635-28
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635
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85
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23.0
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2000-2800
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125
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1.40(1978)
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0.95
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0.350
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3.6
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0.0420
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MT1-765-22
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765
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85
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32.0
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2000-2200
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125
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1.55(3140)
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0.85
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0.210
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3.6
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0.0420
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MT1-830-18
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830
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85
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33.0
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1000-1800
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130
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1.45(2512)
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0.80
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0.170
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3.6
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0.0420
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The basic parameters of diode modules.
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Type
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IFAV
А
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TC
oC
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IFSM
kА
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VRRM
V
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Tj max
oC
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VFM (IFM)
V(А)
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VT(TO)
V
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rT
MΩ
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VISOL
kV
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Rthjc
К/W
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Tjmax
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25 oC
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Sinus.
50 Гц; RMS; t=1 s
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At the position. АС
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MD1-950-44
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950
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100
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29.0
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3800-4400
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160
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1.77(2512)
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0.85
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0.280
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3.6
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0.0420
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MD1-1125-28
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1125
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100
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36.0
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2000-2800
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160
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1.38(3140)
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0.80
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0.170
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3.6
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0.0420
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The substitution on other module design during supply will be discussed with customers in advance.
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